NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied ...

To Address the Latest Trends in Power Electronics, Company to Showcase MaxSiC™ Series SiC MOSFETs Alongside Broad Portfolio ...

Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging G2 technology, these devices enable faster switching and lower power losses ...

For some SiC MOSFETs, which commonly feature higher voltage ... The new product has a built-in active Miller clamp circuit, ...

Vishay Intertechnology, Inc. (NYSE: VSH) is set to highlight its latest advancements in power electronics at the Applied ...

For some SiC MOSFETs, which commonly feature higher voltage ... so there is no need for an additional power supply for negative voltage and external active Miller clamp circuits.