Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...
NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...
In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...
Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).
In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...
For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied ...
Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance ...
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