SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

The active Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

On this front, Infineon Technologies offers a wide range of automotive-qualified isolated gate-driver ICs covering the usage of MOSFET, IGBT, and SiC technologies in applications up to 1,200 V.

Complete optimization of SiC MOSFETs with long SCWT using this approach ... well-screened for latent defects and offer easier gate driver desaturation (dSat) design for high di/dt and dv/dt ...

and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly sensitive to changes in gate voltage. TLP5814H has an operating temperature r ...