NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...
Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...
Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...
To Address the Latest Trends in Power Electronics, Company to Showcase MaxSiC™ Series SiC MOSFETs Alongside Broad Portfolio ...
Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied ...
Vishay Intertechnology, Inc. (NYSE: VSH) is set to highlight its latest advancements in power electronics at the Applied ...
The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied ...
The power module packaging materials market will reach almost $6.1 billion by 2030 with a CAGR of almost 11% between 2024 ...
MALVERN, Pa., March 11, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company ...
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