In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Cambridge GaN Devices' Combo ICeGaN boosts EV efficiency, blending GaN & IGBT for cost-effective 100kW+ powertrains.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, “ TLP5814H ,” with an ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, "TLP5814H," with ...

“Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ...

SiC, IGBT, IPM, TVS, HV Gate Drivers, Power IC, and Digital Power products. AOS has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in ...

that incorporates an active Miller clamp function for driving silicon carbide (SiC) MOSFETs. Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

For some SiC MOSFETs, which commonly feature higher ... that reduce the negative voltage applied to the gate when the IGBTs are turned off, and in these cases, gate drivers with a built-in active ...