Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

The new product has a built-in active Miller clamp circuit, so there is no need for an additional power supply for ... making it suitable as a gate driver for SiC MOSFETs, which are highly ...

The IC supplies the flexibility to function as either a single-channel H-bridge or two half-bridge channels gate driver. When paired with an external MOSFET, it can replace mechanical relays, ...

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications.

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of " TB9103FTG ," a gate driver IC ...

STMicroelectronics’ VIPerGaN65D flyback converter, with its SOIC16 outline, permits extremely small and economical power ...

To drive a MOSFET requires more than merely a logic level output, there’s a requirement to charge the device’s gate which necessitates a suitable buffer amplifier. A variety of different ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started volume shipments of the SmartMCD™ Series of gate driver ICs with embedded microcontroller (MCU). The first product ...

The new product has a built-in active Miller clamp circuit, so there is no need for an additional power supply for negative voltage ... making it suitable as a gate driver for SiC MOSFETs, which are ...