His solution is to add a P channel MOSFET which only allows power to flow when the polarity of the source voltage is correct. The schematic above shows the P-FET on the high side of the circuit.
This course introduces more advanced concepts of switched-mode converter circuits. Realization of the power semiconductors in inverters or in converters having bidirectional power flow is explained.
NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...
NoMIS Power, a leader in advanced silicon carbide (SiC) power semiconductor technology, has announced a major breakthrough in improving the short-circuit withstand time (SCWT) of SiC MOSFETs. This ...
Toshiba has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply ...
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five ...
Toshiba's new gate driver IC for brushed DC motors supports downsizing, low power use, and higher reliability in automotive ...
In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...
The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc. MaxSiCâ„¢ is a trademark of MaxPower Semiconductor, Inc. Registration pending. IHLE, ThermaWick, Power Metal Strip and eSMP are ...
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