Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space ...

Infineon offers four different N-channel MOSFETs, each optimised for specific tasks. Engineers can select between two voltage ...

Abstract: A high-performance, depletion-load, bipolar-igfet technology is described. The optimization of device and circuit parameters, the ion-implanted depletion-load fabrication process, and the ...

"Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable ...

Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO) space applications “with radiation performance suitable for missions lasting two to five ...

Over the past decade, n‐type metal‐oxide semiconductors have achieved great success in advanced displays and a wide range of optoelectronic devices owing to their low cost, excellent electron ...