SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

To drive a MOSFET requires more than merely a logic level output, there’s a requirement to charge the device’s gate which necessitates a suitable buffer amplifier. A variety of different ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly sensitive to changes in gate voltage. TLP5814H has an operating temperature r ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

Toshiba's new gate driver IC for brushed DC motors supports downsizing, low power use, and higher reliability in automotive ...

The IC supplies the flexibility to function as either a single-channel H-bridge or two half-bridge channels gate driver. When paired with an external MOSFET, it can replace mechanical relays, ...

A transformer designed for high-voltage systems ensures performance with low coupling capacitance, strong insulation & a wide ...

The L99MH98 can drive four external full bridges ... While the drivers can control both logic-level and standard-level MOSFETs, extended gate current capability, programmable up to 120mA, permits ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

The active Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sinking current rating of 6.8A, making it suitable as a gate driver for SiC MOSFETs, which are highly ...