A landmark development led by researchers from the University of Glasgow could help create a new generation of diamond-based transistors for use in high-power electronics. Their new diamond ...

By Sonia Fernandez In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled ...

A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

RFMW, part of Exponential Technology Group, Inc., a premier distributor of power management and RF and microwave components ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

In a significant advancement for semiconductor technology, ECE's Prof. Kaustav Banerjee , co-authors Arnab Pal & Wei Cao and researchers have unveiled novel three-dimensional (3D) transistors ...

Today, MOSFETs are the most common type of transistor. This is due to the unique features of this transistor, mainly low-power consumption and high manufacturing yield. It can be used as a switch and ...

The hybrid flyback topology offers several advantages over ACF and LLC resonant converters. It lessens magnetic energy storage and operates with lower leakage inductance, resulting in a smaller ...

High Electron Mobility Transistor Market Expected to Reach $9.3 Billion by 2031 - Allied Market Research David Correa Allied Market Research + 1800-792-5285 email us here Visit us on social media: ...

This new design allows for improved thermal management by offloading power dissipation to the external PMOS transistors outside the device package, enabling efficient heat dissipation in high-power ...