The GaN wafer’s unique crystal structure is key to its dual functionality. Each side of the wafer has different properties, ...

While GaN semiconductors have been in use since the 1990s, primarily in light-emitting diodes (LEDs), this advancement in larger wafer technology is a major step forward to bring both increased ...

BluGlass’s high-power single-mode MOPA combines the benefits of a single-mode laser, and small form factor advantages for ...

I have been talking about GaN on Silicon for several years because it offers a path to cost reduction in LED’s in the same way as silicon semiconductors. This year at Photonics West 2015, Aixtron ...

a) Cross sectional structure. b) TEM image of top 80 nm of the HEMT structure. The dark gray layer marks the start of the surface. c) STEM image of top 80 nm. The surface starts beneath the black ...

For the 2025 financial year, Aixtron expects a short-term weakness in power electronics and a decline in demand in the field ...

RS: The progress of the compound semiconductor industry can be seen in the increase in substrate size. Your company talks about this, using the phrase ‘Going large’. You feel that the first ...

BluGlass (ASX:BLG) has demonstrated a world-leading performance in gallium nitride (GaN) single-mode lasers, achieving 1,250 milliwatts of power from a single laser chip while maintaining ...

(MENAFN- GlobeNewsWire - Nasdaq) Delray Beach, FL, Feb. 21, 2025 (GLOBE NEWSWIRE) -- The report " RF Gallium Nitride market by Device (Discrete RF Device, Integrated RF Device), wafer size ...