Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...
GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
These two CoolGaN G3 transistors, compatible with industry-standard silicon MOSFET packages, enable easy multi-sourcing ... Their new packages, combined with GaN technology, ensure low-resistance ...
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