EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

STMicroelectronics’ VIPerGaN65D flyback converter, with its SOIC16 outline, permits extremely small and economical power ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

To make them normally-off – enhancement-mode, like a silicon power mosfet – there are two commercial routes: cascode connection with a low-voltage silicon mosfet (Transphorm, Nexperia) or ‘p-GaN gate’ ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

That compact size is thanks to GaN semiconductors, which are able to run cooler at higher power levels than their silicon forebearers. Cracking into the charger required levering open the case.

The 1200V GaN device delivers greater than 99 percent efficiency and performs well against a leading SiC MOSFET of similar ... mobility and infrastructure power systems as well as industrial ...

Infineon is advancing industry-wide standardization by offering its CoolGaN Generation 3 (G3) transistors in silicon MOSFET packages ... Their new packages, combined with GaN technology, ensure ...

Ugreen's GaN-based power station packs a lot of juice inside a compact body with multiple USB ports and an Apple-certified adjustable MagSafe puck. In a world filled with niche chargers ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round.