GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Built on a GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of ...

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 ...

EPC has introduced an evaluation board implementing a 40Arms (60A peak) three-phase inverter that will run from 30V to 130V.

This chapter gives an overview of GaN‐based devices for millimeter‐wave (mmW) applications. The recent progress in GaN HEMT (high electron mobility transistor) technology has enabled an order of ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

This Project consists programs related to the simulations of HEMT(High Electron Mobility Transistor).These codes are written for SILVACO TCAD simulation tool. It mainly concerned about improvement of ...

The lateral GaN HEMT has found wide use in many applications, including power adapters and data center power supplies. The wide bandgap, high channel mobility and saturation velocity, as well as the ...

ICeGaN is a monolithically integrated GaN chip that includes the high-voltage e-mode power device and an auxiliary low-voltage HEMT that acts as a pass gate between the external gate supply and the ...

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power ...

Abstract: This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator (VCO). The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel ...