EE World Online2d
High-speed isolated gate drivers optimized for bi-direction GaN control
Navitas Semiconductor has announced the latest breakthrough of the world’s first production-released 650 V bi-directional ...
Electronics Weekly1mon
Isolated GaN gate driver in SO-8
Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that ... and can be supplied by bootstrapping for half-bridge high-sides, although regulation will probably be ...
Planet Analog4d
GaN switch claims transition from two-stage to single-stage conversion
A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.
sciencex6d
Industry's first 80-V half-bridge GaN FET module
Texas Instruments today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and ...