Distributor Rutronik is stocking an isolated single-channel gate driver for GaN hemts that comes in a 4.9 x 6 x 1.65mm SOP-JW8 package. Made by Rohm and called BM6GD11BFJ-LB, they have “an isolation ...
STAR2040 is a CMOS cascode driver circuit designed for use with high-current GaN (or SiC) power FET devices. It can be operated with 20 A of current, with a typical on-resistance of <15 milliohms. In ...
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The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
Gallium-nitride (GaN) power devices are becoming one of the core building blocks in LiDAR sensors thanks to their ultra-fast ...
Texas Instruments has announced a new family of radiation-hardened and radiation-tolerant half-bridge GaN FET gate drivers. This family of gate drivers incorporates the industry's first space-grade ...
Accelerating development towards the mass production of GaN devices for automotive applications ROHM's New GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless Package Compact design features excellent heat ...
Rohm has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package - a packaging technology increasingly being adopted in ...
Joyce Hwang Qi Hui has known Gan Jiea Jie for many years and has always recognised him as a person who occasionally finds ...
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