By doing so, they were able to achieve a configuration where the HEMT on one side powers the LED on the other - an ...

Researchers from Pohang University of Science and Technology (POSTECH) and the University of Montpellier have successfully ...

When light interacts with metallic nanostructures, it instantaneously generates plasmonic hot carriers, which serve as key ...

A consortium led by Fraunhofer Institute for Energy ... this project in the first place,” he said. The use of gallium nitride in inverters could also allow for higher switching frequencies ...

Gallium nitride (GaN), a third-generation semiconductor material, is widely used in devices such as chargers, 5G base stations, radar systems, military communications, and aerospace applications.

ALLOS Semiconductors is a Gallium Nitride-on-Silicon (GaN-on-Si) epiwafer technology company focusing on micro-LED applications. Founded in 2014 in Dresden, Germany, the company has repeatedly ...

A Cambridge-based innovator in gallium nitride power devices has closed a $32m Series C funding round led by a strategic investor with participation from British Patient Capital. Cambridge GaN Devices ...

This achievement, accomplished via metal-organic chemical vapour deposition (MOCVD) on a gallium nitride (GaN ... The study, led by Professors Jong Kyu Kim and Si-Young Choi (POSTECH) and ...