To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon etching and passivation steps. With the help of a high-density plasma ...
Samsung Electronics has been confirmed to be planning to introduce extreme cold etching equipment from Tokyo Electron (TEL) for the mass production of 400-layer 10th generation (V10) NAND flash.
Lam Research announced on the 11th the launch of its etching equipment, 'Akara,' which can be applied to the three-dimensional (3D) semiconductor manufacturing process. According to Lam Research ...
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