Semiconductor Engineering4d
Improving GaN Device Architectures
GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...
Hosted on MSN3mon
There's two sides to this semiconductor, and many simultaneous functions
The single HEMT device succeeded in driving a large LED, turning it on and off at kilohertz frequencies—plenty for a working LED display. Currently, LED displays have a separate transistor and ...
Tech Xplore on MSN4mon
Developing GaN transistors and high-power amplifiers for millimeter wave satellite communications
The institute is also using its extensive research infrastructure to develop the new GaN07 technology, implement the HEMTs ...
TMCnet10d
Guerrilla RF Unveils New Gallium Nitride (GaN) Dice for High-Performance RF Applications
Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...
New Electronics13d
Teledyne HiRel Semiconductors releases high-power RF GaN switch
Teledyne HiRel Semiconductors has announced the availability of its Gallium Nitride (GaN) high-power RF switch, model ...
Compoundsemiconductor.net24y
Guerrilla RF releases GaN power amplifier dice
Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.
RF Globalnet18d
Teledyne HiRel Semiconductors Releases High-Power RF GaN Switch (30 MHz to 5 GHz)
Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP.